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SI2302-HXY Datasheet
Datasheet specifications
| Datasheet's name | SI2302-HXY |
|---|---|
| File size | 60.027 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet SI2302-HXY |
Download Datasheet |
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: HXY MOSFET SI2302-HXY
- Power Dissipation (Pd): 0.9W
- Drain Source Voltage (Vdss): 20V
- Input Capacitance (Ciss@Vds): 260pF@10V
- Continuous Drain Current (Id): 2.8A
- Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 55mΩ@4.5V,2.8A
- Package: SOT-23(TO-236)
- Manufacturer: HXY MOSFET